Semiconductor package including semiconductor chips

ABSTRACT

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

CROSS-REFERENCE TO THE RELATED APPLICATION

This non-provisional patent application claims priority to Korean PatentApplication No. 10-2020-0139250, filed on Oct. 26, 2020, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein by reference in its entirety.

BACKGROUND 1. Field

The inventive concept relates to a semiconductor package including aplurality of semiconductor chips and a method of manufacturing thesemiconductor package.

2. Description of the Related Art

Various semiconductor packages equipped with a plurality ofsemiconductor chips are being researched. A size of each semiconductorpackage may be standardized based on industry standard. As the number ofsemiconductor chips equipped in semiconductor packages having a limitedsize increases, it is easy to increase the degree of integration and anoperating speed.

SUMMARY

The exemplary embodiments of the disclosure provide a semiconductorpackage equipped with a plurality of semiconductor chips and a method ofmanufacturing the semiconductor package.

A semiconductor package in accordance with an embodiment of thedisclosure may include a semiconductor chip on a package substrate. Thesemiconductor package may additionally include a plurality of firstconductive connections connecting the semiconductor chip to the packagesubstrate, a first spacer and a second spacer on the package substrate,each of the first spacer and the second spacer horizontally spaced apartfrom the semiconductor chip, and a first tower and a second tower. Eachof the first tower and second tower includes a plurality of memorychips, a first memory chip disposed at a lowermost end of the firsttower and vertically overlapping the semiconductor chip and the firstspacer from a top-down view, and a second memory chip disposed at alowermost end of the second tower and vertically overlapping thesemiconductor chip and the second spacer from a top-down view. Thesemiconductor package may further include a plurality of first adhesivelayers. The plurality of first adhesive layers includes an adhesivelayer attached between the first memory chip and the semiconductor chip,an adhesive layer attached between the first memory chip and the firstspacer, an adhesive layer attached between the second memory chip andthe semiconductor chip, and an adhesive layer attached between thesecond memory chip and the second spacer.

A semiconductor package in accordance with an embodiment of thedisclosure may include a semiconductor chip on a package substrate. Thesemiconductor package may include a plurality of conductive connectionsconnecting the semiconductor chip to the package substrate may bedisposed, a plurality of towers which are apart from one another andeach include a plurality of memory chips may be disposed, wherein alowermost memory chip of each of the plurality of towers overlaps thesemiconductor chip from a top-down view. The semiconductor packagefurther includes a plurality of adhesive layers be attached between thelowermost memory chip of each of the plurality of towers and thesemiconductor chip.

A semiconductor package in accordance with an embodiment of thedisclosure may include a first semiconductor chip, a secondsemiconductor chip, and a third semiconductor chip on a packagesubstrate and horizontally spaced apart from each other. Thesemiconductor package may include a plurality of first conductiveconnections connecting the first to third semiconductor chips to thepackage substrate, and a first tower and a second tower each including aplurality of memory chips. A first memory chip disposed at a lowermostend of the first tower may overlap the first semiconductor chip and thesecond semiconductor chip from a top-down view. A second memory chipdisposed at a lowermost end of the second tower may overlap the firstsemiconductor chip and the third semiconductor chip from a top-downview. A plurality of first adhesive layers may be attached respectivelybetween the first memory chip and the first semiconductor chip, betweenthe first memory chip and the second semiconductor chip, between thesecond memory chip and the first semiconductor chip, and between thesecond memory chip and the third semiconductor chip.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view for describing a semiconductor packageaccording to embodiments of the disclosure.

FIG. 2 is a layout for describing a semiconductor package according toembodiments of the disclosure.

FIG. 3 is a cross-sectional view for describing a semiconductor packageaccording to embodiments of the disclosure.

FIG. 4 is a layout for describing a semiconductor package according toembodiments of the disclosure.

FIGS. 5 to 8 are cross-sectional views for describing methods ofmanufacturing a semiconductor package, according to embodiments of thedisclosure.

FIGS. 9 to 15 are cross-sectional views for describing a semiconductorpackage according to embodiments of the disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

FIG. 1 is a cross-sectional view for describing a semiconductor packageaccording to embodiments of the disclosure. The semiconductor packageaccording to embodiments of the disclosure may include a Dolmen-likestructure (e.g., in reverse).

Referring to FIG. 1 , the semiconductor package according to embodimentsof the disclosure may include a package substrate 11, a firstsemiconductor chip 21, a first spacer 27, a second spacer 28, aplurality of main memory chips 31 to 38 and 51 to 58, a plurality ofsubstrate adhesive layers 71, a plurality of first adhesive layers 72, aplurality of second adhesive layers 73, a plurality of first conductiveconnections 81, a plurality of second conductive connections 83, and anencapsulant 91.

The semiconductor package may include a first side surface S1 and asecond side surface S2 opposite to the first side surface S1. The firstside surface S1 and the second side surface S2 may be determined basedon the package substrate 11 and/or the encapsulant 91. In an embodiment,the package substrate 11 and the encapsulant 91 may be exposed at thefirst side surface S1 and the second side surface S2. Side surfaces ofthe package substrate 11 and the encapsulant 91 may be substantiallycoplanar with each other. Terms such as “same,” “equal,” “planar,” or“coplanar,” as used herein encompass identicality or near identicalityincluding variations that may occur, for example, due to manufacturingprocesses. The term “substantially” may be used herein to emphasize thismeaning, unless the context or other statements indicate otherwise.

The package substrate 11 may include a plurality of substrate wirings 13and a plurality of substrate pads 15. The first semiconductor chip 21may include a plurality of first pads 25.

For convenience of description, the plurality of main memory chips 31 to38 and 51 to 58 may be respectively referred to as a first memory chip31, a second memory chip 32, a third memory chip 33, a fourth memorychip 34, a fifth memory chip 35, a sixth memory chip 36, a seventhmemory chip 37, an eighth memory chip 38, a twenty-first memory chip 51,a twenty-second memory chip 52, a twenty-third memory chip 53, atwenty-fourth memory chip 54, a twenty-fifth memory chip 55, atwenty-sixth memory chip 56, a twenty-seventh memory chip 57, and atwenty-eighth memory chip 58. The first memory chip 31, the secondmemory chip 32, the third memory chip 33, the fourth memory chip 34, thefifth memory chip 35, the sixth memory chip 36, the seventh memory chip37, and the eighth memory chip 38 may configure a first tower T1. Thetwenty-first memory chip 51, the twenty-second memory chip 52, thetwenty-third memory chip 53, the twenty-fourth memory chip 54, thetwenty-fifth memory chip 55, the twenty-sixth memory chip 56, thetwenty-seventh memory chip 57, and the twenty-eighth memory chip 58 mayconfigure a second tower T2. As is readily apparent, ordinal numberssuch as “first,” “second,” “third,” etc. may be used simply as labels ofcertain elements, steps, etc., to distinguish such elements, steps, etc.from one another. Terms that are not described using “first,” “second,”etc., in the specification, may still be referred to as “first” or“second” in a claim. In addition, a term that is referenced with aparticular ordinal number (e.g., “first” in a particular claim) may bedescribed elsewhere with a different ordinal number (e.g., “second” inthe specification or another claim). In particular, with regard to thestacks of memory chips discussed herein, terms such as “twenty-first,”“thirty-first,” etc., are meant only as labels. In the context ofstacked chips, to designate a position within a stack of chips, a termsuch as “-positioned” will be used—e.g., a first-positioned memory chipfrom the bottom of a stack of memory chips, a third-positioned memorychip from a top of the stack of memory chips, a last-positioned memorychip from the bottom of a stack of memory chips, etc.

Though eight main memory chips are shown in each stack in FIG. 1 , theplurality of main memory chips 31 to 38 and 51 to 58 may include two ormore or a various number of memory chips, based on technicallimitations. Each of the plurality of main memory chips 31 to 38 and 51to 58 may include a plurality of second pads 85.

FIG. 2 is a layout for describing a semiconductor package according toembodiments of the disclosure.

Referring to FIG. 2 , the semiconductor package according to embodimentsof the disclosure may include a package substrate 11, a firstsemiconductor chip 21, a plurality of main memory chips 31 to 38 and 51to 58, a plurality of first conductive connections 81, and a pluralityof second conductive connections 83.

The package substrate 11 may include a plurality of substrate pads 15(e.g., package substrate pads). The first semiconductor chip 21 mayinclude a plurality of first pads 25 (e.g., chip pads). A first memorychip 31, a second memory chip 32, a third memory chip 33, a fourthmemory chip 34, a fifth memory chip 35, a sixth memory chip 36, aseventh memory chip 37, and an eighth memory chip 38 may form a firsttower T1. A twenty-first memory chip 51, a twenty-second memory chip 52,a twenty-third memory chip 53, a twenty-fourth memory chip 54, atwenty-fifth memory chip 55, a twenty-sixth memory chip 56, atwenty-seventh memory chip 57, and a twenty-eighth memory chip 58 mayform a second tower T2. Each of the first tower T1 and second tower T2may have an angled orientation, with respect to a top surface of thepackage substrate 11. Each of the plurality of main memory chips 31 to38 and 51 to 58 may include a plurality of second pads 85 (e.g., chippads). Each of the plurality of main memory chips 31 to 38 and 51 to 58may include an integrated circuit, including a memory cell array, formedon a semiconductor die formed from a wafer.

Referring again to FIGS. 1 and 2 , the package substrate 11 may includea rigid printed circuit board (PCB), a flexible PCB, or a rigid-flexiblePCB. The package substrate 11 may be a multi-layer PCB. The plurality ofsubstrate wirings 13 may be formed on inner portions and surfaces of thepackage substrate 11. The plurality of substrate pads 15 may be formedon a top surface of the package substrate 11. The plurality of substratepads 15 may include a finger electrode or a finger pad. The plurality ofsubstrate wirings 13 and the plurality of substrate pads 15 may eachinclude or be formed of a conductive material such as copper (Cu),aluminum (Al), tungsten (W), or a combination thereof. The plurality ofsubstrate pads 15 may be electrically connected to the plurality ofsubstrate wirings 13, and may be formed at an external surface of thepackage substrate 11 to connect between the plurality of substratewirings 13 and the main memory chips.

Each of the first semiconductor chip 21, the first spacer 27, and thesecond spacer 28 may be disposed on the package substrate 11. Theplurality of substrate adhesive layers 71 may be attached between thefirst semiconductor chip 21 and the package substrate 11, between thefirst spacer 27 and the package substrate 11, and between the secondspacer 28 and the package substrate 11. The plurality of substrateadhesive layers 71 may include an underfill, an adhesive film, a directadhesive film (DAF), a film over wire (FOW), or a combination thereof.In some embodiments, all of the first semiconductor chip 21, the firstspacer 27, and the second spacer 28 have the same material for theirrespective substrate adhesive layer 71. In other embodiments, at leastone of the first semiconductor chip 21, the first spacer 27, and thesecond spacer 28 have different material from the other two for theirrespective substrate adhesive layer 71. Each of the first spacer 27 andthe second spacer 28 may have substantially the same vertical thicknessas that of the first semiconductor chip 21. Top surfaces of the firstsemiconductor chip 21, the first spacer 27, and the second spacer 28 maybe substantially coplanar with one another.

The first semiconductor chip 21 may include an integrated circuit formedon a semiconductor die formed from a wafer, and may include a bufferchip, an interposer chip, a controller chip, a logic chip, or acombination thereof. In an embodiment, the first semiconductor chip 21may include a memory having an operating speed which is relativelyfaster than that of each of the plurality of main memory chips 31 to 38and 51 to 58. For example, the first semiconductor chip 21 may include abuffer memory device having an operating speed which is relativelyfaster than that of each of the plurality of main memory chips 31 to 38and 51 to 58, like static random access memory (SRAM), dynamic randomaccess memory (DRAM), or a combination thereof. The first semiconductorchip 21 may include a volatile memory device, a non-volatile memorydevice, or a combination thereof. The plurality of first pads 25 may beformed on one surface of the first semiconductor chip 21. The pluralityof first pads 25 may include or be formed of a conductive material suchas Cu, Al, W, or a combination thereof.

Each of the first spacer 27 and the second spacer 28 may include a dummyblock, such as a dummy chip, having substantially the same verticalthickness as that of the first semiconductor chip 21. The dummy block ordummy chip may perform no electrical communication function, but mayrather serve as a physical support structure. In an embodiment, each ofthe first spacer 27 and the second spacer 28 may include a PCB, a metalplate, a plastic plate, or a semiconductor substrate. Each of the firstspacer 27 and second spacer 28 may be described as a support block, orsupport post. A “block” as used in this physical sense refers to athree-dimensional structure having substantially flat top and bottomsurfaces and having rigidity to support a structure formed thereon.

A center of the first semiconductor chip 21 may be aligned adjacent to acenter of the package substrate 11. In an embodiment, the center of thefirst semiconductor chip 21 may be vertically aligned (e.g., from atop-down view) with respect to the center of the package substrate 11.The first spacer 27 may be disposed between the first semiconductor chip21 and the first side surface S1. The second spacer 28 may be disposedbetween the first semiconductor chip 21 and the second side surface S2.

The plurality of first conductive connections 81 may be disposed betweenthe first semiconductor chip 21 and the package substrate 11. Theplurality of first conductive connections 81 may each contact arespective one of the plurality of first pads 25 and the plurality ofsubstrate pads 15. The first semiconductor chip 21 may be electricallyconnected to the package substrate 11 via the plurality of first pads25, the plurality of first conductive connections 81, and the pluralityof substrate pads 15. The plurality of first conductive connections 81may include a bonding wire, a beam lead, a conductive tape, a conductivespacer, a through substrate via (e.g., through silicon via), a solderball, a solder bump, or a combination thereof. For example, in someembodiments, all of the first conductive connections 81 are bondingwires. In other embodiments, each of the first conductive connections 81include a through substrate via and a solder bump or solder ballconnected to the through substrate via. In an embodiment, the pluralityof first conductive connections 81 may include a bonding wire such as agold (Au) wire or an Al wire.

The first tower T1 and the second tower T2 apart from each other may bedisposed on the first semiconductor chip 21. The second tower T2 may bedisposed to be opposite to the first tower T1, e.g., with respect to acenter of the first semiconductor chip 21. At least a portion of thefirst tower T1 may overlap the first semiconductor chip 21 from atop-down view. The first tower T1 may overlap the first semiconductorchip 21 and the first spacer 27 from a top-down view. At least a portionof the second tower T2 may overlap the first semiconductor chip 21 froma top-down view. The second tower T2 may overlap the first semiconductorchip 21 and the second spacer 28 from a top-down view. In someembodiments, in a direction extending between the first spacer 27, thefirst semiconductor chip 21 and the second spacer 28, the first towerT1, also described as a first stack of chips, may have a center ofgravity that aligns with a center of the first spacer 27, or that isbetween the center of the first spacer 27 and the center of the firstsemiconductor chip 21. Similarly, in a direction extending between thefirst spacer 27, the first semiconductor chip 21 and the second spacer28, the second tower T2, also described as a second stack of chips, mayhave a center of gravity that aligns with a center of the second spacer28, or that is between the center of the second spacer 28 and the centerof the first semiconductor chip 21.

The first memory chip 31 may be disposed at a lowermost end of the firsttower T1. The first memory chip 31 may be referred to as a lowermostmain memory chip of the first tower T1. The first memory chip 31, andtherefore the first tower T1, may overhang the first semiconductor chip21, so that a bottom surface of the first memory chip 31 and bottom-mostsurface of the first tower T1 extends beyond an edge (e.g., an outermostedge) of a top surface of the first semiconductor chip 21. Thetwenty-first memory chip 51 may be disposed at a lowermost end of thesecond tower T2. The twenty-first memory chip 51 may be referred to as alowermost main memory chip of the second tower T2. The twenty-firstmemory chip 51, and therefore the second tower T2, may overhang thefirst semiconductor chip 21, so that a bottom surface of thetwenty-first memory chip 31 and bottom-most surface of the second towerT2 extends beyond an edge (e.g., an outermost edge) of a top surface ofthe first semiconductor chip 21. The eighth memory chip 38 may bedisposed at an uppermost end of the first tower T1. The eighth memorychip 38 may be referred to as an uppermost main memory chip of the firsttower T1. The twenty-eighth memory chip 58 may be disposed at anuppermost end of the second tower T2. The twenty-eighth memory chip 58may be referred to as an uppermost main memory chip of the second towerT2.

A side surface of the first memory chip 31 may be aligned vertically,from a top-down view, with a side surface of the first spacer 27. Theside surface of the first memory chip 31 and the side surface of thefirst spacer 27 may be substantially coplanar with each other. A sidesurface of the twenty-eighth memory chip 58 may be aligned vertically,from a top-down view, with a side surface of the second spacer 28. Theside surface of the twenty-eighth memory chip 58 and the side surface ofthe second spacer 28 may be substantially coplanar with each other.

The plurality of first adhesive layers 72 may be disposed between thefirst memory chip 31 and the first semiconductor chip 21 and between thetwenty-first memory chip 51 and the first semiconductor chip 21. Onefirst adhesive layer 72 selected from among the plurality of firstadhesive layers 72 may be attached between the first memory chip 31 andthe first semiconductor chip 21 and may extend to or may also be formedin a region between the first memory chip 31 and the first spacer 27.For example, an adhesive layer may be formed between the first memorychip 31 and the first semiconductor chip 21, and an adhesive layer maybe formed between the first memory chip 31 and the first spacer 27.These two adhesive layers may be part of the same continuous adhesivelayer, or may be separated from each other. One other first adhesivelayer 72 selected from among the plurality of first adhesive layers 72may be attached between the twenty-first memory chip 51 and the firstsemiconductor chip 21 and may extend to or may also be formed in aregion between the twenty-first memory chip 51 and the second spacer 28.For example, an adhesive layer may be formed between the twenty-firstmemory chip 51 and the first semiconductor chip 21, and an adhesivelayer may be formed between the twenty-first memory chip 51 and thesecond spacer 28. These two adhesive layers may be part of the samecontinuous adhesive layer, or may be separated from each other.

The plurality of first adhesive layers 72 may include a DAF or an FOW.Some of the plurality of first conductive connections 81 may extend toinner portions of the plurality of first adhesive layers 72. Some of theplurality of first conductive connections 81 may partially pass throughthe plurality of first adhesive layers 72. Each of the plurality offirst adhesive layers 72 may have a vertical thickness which isrelatively greater than that of each of the plurality of second adhesivelayers 73.

Each of the plurality of main memory chips 31 to 38 and 51 to 58 mayinclude a non-volatile memory device, a volatile memory device, or acombination thereof. Each of the plurality of main memory chips 31 to 38and 51 to 58 may include NAND flash memory, magnetoresistive randomaccess memory (MRAM), phase-change random access memory (PRAM),ferroelectric random access memory (FeRAM), resistive random accessmemory (RRAM), X-point random access memory (X-point RAM), or acombination thereof. Each of the plurality of main memory chips 31 to 38and 51 to 58 may include DRAM, SRAM, or a combination thereof.

The plurality of second pads 85 may be respectively formed on firstsurfaces of the plurality of main memory chips 31 to 38 and 51 to 58.The plurality of second pads 85 may include or be formed of a conductivematerial such as Cu, Al, W, or a combination thereof. The first toeighth memory chips 31 to 38 may be sequentially stacked. In anembodiment, the first to eighth memory chips 31 to 38 may beoffset-aligned sequentially in a direction toward the first side surfaceS1. For example, the first to eighth memory chips 31 to 38 may bestacked in a cascade structure, or staircase structure, to extend in anupward staircase manner in a direction toward the first side surface S1.

The twenty-first to twenty-eighth memory chips 51 to 58 may besequentially stacked. In an embodiment, the twenty-first totwenty-eighth memory chips 51 to 58 may be offset-aligned sequentiallyin a direction toward the second side surface S2. The twenty-first totwenty-eighth memory chips 51 to 58 may be offset-aligned in a directionopposite to the first to eighth memory chips 31 to 38, for example in amirror structure orientation. For example, the twenty-first totwenty-eighth memory chips 51 to 58 may be stacked in a cascadestructure, or staircase structure, to extend in an upward staircasemanner in a direction toward the second side surface S2. In anembodiment, an interval between the first to eighth memory chips 31 to38 and the twenty-first to twenty-eighth memory chips 51 to 58 mayincrease in a direction distancing away from the first semiconductorchip 21. For example, a distance between the second memory chip 32 andthe twenty-second memory chip 52 may be greater than a distance betweenthe first memory chip 31 and the twenty-first memory chip 51, andrespective distances between chips on the same vertical level betweenthe stacks may increase in a direction away from the first semiconductorchip 21.

The plurality of second adhesive layers 73 may be respectively attachedbetween each memory chip of the first to eighth memory chips 31 to 38and between each chip of the twenty-first to twenty-eighth memory chips51 to 58. The plurality of second adhesive layers 73 may include anunderfill, a DAF, an FOW, or a combination thereof. Each of theplurality of second adhesive layers 73 may have a vertical thicknesswhich is relatively less than that of each of the plurality of firstadhesive layers 71.

The plurality of second conductive connections 83 may be disposedbetween adjacent chips of the first to eighth memory chips 31 to 38 andbetween first memory chips 31 and the first semiconductor chip 21 andmay be disposed between adjacent chips of the twenty-first totwenty-eighth memory chips 51 to 58 and between the twenty-first memorychip 51 and the first semiconductor chip 21. A first set of theplurality of second conductive connections 83 may contact a set of theplurality of second pads 85 and a second set of the plurality of secondconductive connections 83 may contact a set of the first pads 25. Theplurality of main memory chips 31 to 38 and 51 to 58 may be electricallyconnected to the first semiconductor chip 21 via the plurality of secondpads 85, the plurality of second conductive connections 83, and theplurality of first pads 25. The plurality of second conductiveconnections 83 may include a bonding wire, a beam lead, a conductivetape, a conductive spacer, a through silicon via, a solder ball, asolder bump, or a combination thereof. In an embodiment, the pluralityof second conductive connections 83 may be a bonding wire such as a gold(Au) wire or an Al wire.

Some of the plurality of second conductive connections 83 may beconnected between one of the first to eighth memory chips 31 to 38 andthe package substrate 11. Some of the plurality of second conductiveconnections 83 may contact the plurality of second pads 85 and theplurality of first pads 25. The first to eighth memory chips 31 to 38may be electrically connected to the package substrate 11 via theplurality of second pads 85, the plurality of second conductiveconnections 83, and the plurality of first pads 25.

Some of the plurality of second conductive connections 83 may beconnected between one or the twenty-first to twenty-eighth memory chips51 to 58 and the package substrate 11. Some of the plurality of secondconductive connections 83 may contact the plurality of second pads 85and the plurality of first pads 25. The twenty-first to twenty-eighthmemory chips 51 to 58 may be electrically connected to the packagesubstrate 11 via the plurality of second pads 85, the plurality ofsecond conductive connections 83, and the plurality of first pads 25. Itwill be understood that when an element is referred to as being“connected” or “coupled” to or “on” another element, it can be directlyconnected or coupled to or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, or as“contacting” or “in contact with” another element, there are nointervening elements present at the point of contact.

The encapsulant 91 may cover the package substrate 11. The first towerT1, the second tower T2, the first semiconductor chip 21, the firstspacer 27, and the second spacer 28 may be disposed in the encapsulant91.

A horizontal width of the semiconductor package (e.g., in a firstdirection such as the X direction) according to embodiments of thedisclosure may be a first width W1. The first width W1 may be defined asan interval or distance between the first side surface S1 and the secondside surface S2. The first width W1 may be determined based the packagesubstrate 11 and/or the encapsulant 91. The first width W1 may bedetermined based on industry standard. A horizontal width (e.g., in theX direction) of an overlap region (from a top-down view) between thefirst semiconductor chip 21 and the first memory chip 31 may be a secondwidth W2. A horizontal width (e.g., in the X direction) of an overlapregion (from a top-down view) between the twenty-first semiconductorchip 51 and the first memory chip 31 may be substantially the same asthe second width W2.

An interval or distance (e.g., in the X direction) between the firstside surface S1 and the eighth memory chip 38 (from a top-down view) maybe a third width W3. In an embodiment, the first side surface S1 and thesecond side surface S2 may be determined based on the package substrate11. The third width W3 may correspond to a minimum distance (e.g., inthe X direction and from a top-down view) between the eighth memory chip38 and an extension line which passes through the first side surface S1and is perpendicular to a top surface of the package substrate 11 (e.g.,in a Z direction). An interval or distance (e.g., in the X direction)between the second side surface S2 and the twenty-eighth memory chip 58(from a top-down view) may be substantially the same as the third widthW3. In an embodiment, the third width W3 may correspond to a minimuminterval, in the X direction from a top-down view, between each of thefirst to eighth memory chips 31 to 38 and the extension line whichpasses through the first side surface S1 and is perpendicular to the topsurface of the package substrate 11.

An interval between the first memory chip 31 and an extension line whichpasses through a center of the first semiconductor chip 21 and isperpendicular to the top surface of the package substrate 11 may be afourth width W4. An interval between the twenty-first memory chip 51 andan extension line which passes through the center of the firstsemiconductor chip 21 and is perpendicular to the top surface of thepackage substrate 11 may be a fifth width W5. In an embodiment, thefifth width W5 may be substantially the same as the fourth width W4. Aninterval between the first memory chip 31 and the twenty-first memorychip 51 may be a sixth width W6. In an embodiment, the sixth width W6may be a sum of the fourth width W4 and the fifth width W5. A horizontalwidth of the first tower T1 may be a seventh width W7. A horizontalwidth of the second tower T2 may be substantially the same as theseventh width W7.

The second width W2 may be greater than 0 mm and less than half of thefirst width W1. In an embodiment, each of the first memory chip 31 andthe twenty-first memory chip 51 may overlap upper portions of somecorresponding first pads 25 of the plurality of first pads 25 (e.g., ina situation where through substrate vias are used to connect the firstsemiconductor chip 21 to the package substrate 11). In some embodiments,the second width W2 may be greater than about 0.2 mm and less than halfof the first width W1. The third width W3 may be determined based on alimitation of technical reliability. The third width W3 may be greaterthan 0 mm and equal to or less than the second width W2. In anembodiment, the third width W3 may be greater than about 0.1 mm and lessthan or equal to the second width W2. In an embodiment, the second widthW2 may be greater than or equal to the third width W3 and less than halfof the first width W1. Terms such as “about” or “approximately” mayreflect amounts, sizes, orientations, or layouts that vary only in asmall relative manner, and/or in a way that does not significantly alterthe operation, functionality, or structure of certain elements. Forexample, a range from “about 0.1 to about 1” may encompass a range suchas a 0%-5% deviation around 0.1 and a 0% to 5% deviation around 1,especially if such deviation maintains the same effect as the listedrange.

Widths of the first through eighth memory chips 31-38 and twenty-firstthrough twenty-eighth memory chips 51-58 in the Y direction may besubstantially the same as each other, and may be greater than a width ofthe first semiconductor chip 21. Widths of the first and second spacers27 and 28 in the Y direction may be substantially the same as the widthsin the Y direction of the first through eighth memory chips 31-38 andtwenty-first through twenty-eighth memory chips 51-58, or may be lessthan the widths in the Y direction of the first through eighth memorychips 31-38 and twenty-first through twenty-eighth memory chips 51-58and greater than the width in the Y direction of the first semiconductorchip 21.

Portions of the first semiconductor chip, the first spacer 27, and thesecond spacer 28 that overlap the bottommost memory chips 31 and 51 ofthe first and second towers T1 and T2 may be described as supports,support portions, or support structures. One side of the first tower T1may be supported by a support formed of part or all of first spacer 27,and the other side of the first tower T1 may be supported by a supportformed of part of the first semiconductor chip 21. One side of thesecond tower T2 may be supported by a support formed of part or all ofsecond spacer 28, and the other side of the second tower T2 may besupported by a support formed of part of the first semiconductor chip21.

According to embodiments of the disclosure, a size of the seventh widthW7 may be maximized by controlling a size of the second width W2. Thenumber of memory chips equipped in the first tower T1 and the secondtower T2 may increase based on enlarging a size of the seventh width W7.The plurality of main memory chips 31 to 38 and 51 to 58 may beelectrically connected to the first semiconductor chip 21 via theplurality of second conductive connections 83. A signal transfer path ofthe semiconductor package according to embodiments of the disclosure maybe shortened.

FIG. 3 is a cross-sectional view for describing a semiconductor packageaccording to embodiments of the disclosure, and FIG. 4 is a layout fordescribing a semiconductor package according to embodiments of thedisclosure.

Referring to FIGS. 3 and 4 , an interval between a first memory chip 31and a twenty-first memory chip 51 may be a sixth width W6. A minimumvalue of the sixth width W6 may be determined based on a limitation oftechnical reliability. In an embodiment, the minimum value of the sixthwidth W6 may be greater than a horizontal width of each of a pluralityof first pads 25. The minimum value of the sixth width W6 may be greaterthan about 0.1 mm.

FIGS. 5 to 8 are cross-sectional views for describing methods ofmanufacturing a semiconductor package, according to embodiments of thedisclosure.

Referring to FIG. 5 , the methods of manufacturing a semiconductorpackage according to embodiments of the disclosure may include a processof mounting a first semiconductor chip 21 on a package substrate 11including a first side surface 51 and a second side surface S2 by usinga substrate adhesive layer 71. A plurality of first conductiveconnections 81 may be formed between a plurality of first pads 25 of thefirst semiconductor chip 21 and a plurality of substrate pads 15 of thepackage substrate 11. Though the first conductive connections 81 aredepicted as bonding wires, in some embodiments, they may be throughsubstrate vias.

Referring to FIG. 6 , a first spacer 27 and a second spacer 28 may beattached on the package substrate 11 by using the substrate adhesivelayer 71.

Referring to FIG. 7 , a first tower T1 and a second tower T2 apart fromeach other may be disposed on the first semiconductor chip 21, the firstspacer 27, and the second spacer 28. A plurality of first adhesivelayers 72 may be attached between a first memory chip 31 and the firstsemiconductor chip 21, between the first memory chip 31 and the firstspacer 27, between the twenty-first memory chip 51 and the firstsemiconductor chip 21, and between the twenty-first memory chip 51 andthe second spacer 28. In some embodiments (e.g., if wire bonding isused), the plurality of first conductive connections 81 may partiallypass through the plurality of first adhesive layers 72. For example, thefirst adhesive layers 72 may be a DAF or FOW.

A plurality of second adhesive layers 73 may be attached between eachchip of the first to eighth memory chips 31 to 38 and between the firstmemory chip 31 and the first semiconductor chip 21, and between eachchip of the twenty-first to twenty-eighth memory chips 51 to 58 andbetween the twenty-first memory chip 51 and the first semiconductor chip21. The plurality of second conductive connections 83 may be formedbetween the first to eighth memory chips 31 to 38 and the firstsemiconductor chip 21 and between the twenty-first to twenty-eighthmemory chips 51 to 58 and the first semiconductor chip 21. Each of theplurality of second conductive connections 83 may contact a pair ofsecond pads 85 of the plurality of second pads 85, or may contact asecond pad 85 of the plurality of second pads 85 and a first pad 25 ofthe plurality of first pads 25.

Referring to FIG. 8 , an encapsulant 91 covering the package substrate11 is formed. The encapsulant 91 may include an epoxy molding compound,for example. A plurality of external terminals 17 may then be formed onone surface (for example, a bottom surface) of the package substrate 11.The plurality of external terminals 17 may be connected to a pluralityof substrate wirings 13. The plurality of external terminals 17 mayinclude, for example, solder balls, solder bumps, a pin grid array, alead grid array, conductive taps, or combinations thereof. In anembodiment, the plurality of external terminals 17 may be omitted.

FIGS. 9 to 15 are cross-sectional views for describing a semiconductorpackage according to embodiments of the disclosure.

Referring to FIG. 9 , a semiconductor package according to embodimentsof the disclosure may include a package substrate 11, a firstsemiconductor chip 21, a first spacer 27, a second spacer 28, aplurality of main memory chips 31 to 38 and 51 to 58, a plurality ofsubstrate adhesive layers 71, a plurality of first adhesive layers 72, aplurality of second adhesive layers 73, a plurality of first conductiveconnections 81, a plurality of second conductive connections 83, anencapsulant 91, and a plurality of dummy chips 94.

In an embodiment, the plurality of dummy chips 94 may be disposed on aneighth memory chip 38 and a twenty-eighth memory chip 58. Each of theplurality of dummy chips 94 may include a size and a configuration whichare similar to those of each of the plurality of main memory chips 31 to38 and 51 to 58. The plurality of dummy chips 94 may disperse stressesof the plurality of main memory chips 31 to 38 and 51 to 58. Each of theplurality of dummy chips 94 may act as a heat dissipation plate. Theplurality of dummy chips 94 may be disposed in the encapsulant 91. In anembodiment, the plurality of dummy chips 94 may be exposed at a sidesurface and/or a top surface of the encapsulant 91. In one embodiment,the plurality of dummy chips are not communicatively connected to anyother of the chips in each tower.

Referring to FIG. 10 , a first memory chip 31, a second memory chip 32,a third memory chip 33, and a fourth memory chip 34 may be connected toat least one corresponding first pad 25 of a plurality of first pads 25of the first semiconductor chip 21 by using at least one secondconductive connection 83 selected from among a plurality of secondconductive connections 83. A fifth memory chip 35, a sixth memory chip36, a seventh memory chip 37, and an eighth memory chip 38 may beconnected to at least one other corresponding first pad 25 of theplurality of first pads 25 of the first semiconductor chip 21 by usingat least one other second conductive connection 83 selected from amongthe plurality of second conductive connections 83.

A twenty-first memory chip 51, a twenty-second memory chip 52, atwenty-third memory chip 53, and a twenty-fourth memory chip 54 may beconnected to at least one other corresponding first pad 25 of theplurality of first pads 25 of the first semiconductor chip 21 by usingat least one other second conductive connection 83 selected from amongthe plurality of second conductive connections 83. A twenty-fifth memorychip 55, a twenty-sixth memory chip 56, a twenty-seventh memory chip 57,and a twenty-eighth memory chip 58 may be connected to at least oneother corresponding first pad 25 of the plurality of first pads 25 ofthe first semiconductor chip 21 by using at least one other secondconductive connection 83 selected from among the plurality of secondconductive connections 83.

Referring to FIG. 11 , a semiconductor package according to embodimentsof the disclosure may include a package substrate 11, a firstsemiconductor chip 21, a second semiconductor chip 22, a thirdsemiconductor chip 23, a plurality of main memory chips 31 to 46 and 51to 66, a plurality of substrate adhesive layers 71, a plurality of firstadhesive layers 72, a plurality of second adhesive layers 73, aplurality of first conductive connections 81, a plurality of secondconductive connections 81, and an encapsulant 91. Each of the secondsemiconductor chip 22 and the third semiconductor chip 23 may include aconfiguration which is similar to that of the first semiconductor chip21.

The plurality of substrate adhesive layers 71 may be attached betweenthe first semiconductor chip 21 and the package substrate 11, betweenthe second semiconductor chip 22 and the package substrate 11, andbetween the third semiconductor chip 23 and the package substrate 11.Top surfaces of the first semiconductor chip 21, the secondsemiconductor chip 22, and the third semiconductor chip 23 may besubstantially coplanar with one another. The second semiconductor chip22 may be disposed between the first semiconductor chip 21 and a firstside surface S1 of the semiconductor package. The third semiconductorchip 23 may be disposed between the first semiconductor chip 21 and asecond side surface S2 of the semiconductor package.

The plurality of first conductive connections 81 may be respectivelyconnected between the package substrate 11 and the first semiconductorchip 21, the second semiconductor chip 22, and the third semiconductorchip 23. The plurality of first conductive connections 81 may contactthe plurality of first pads 25 and the plurality of substrate pads 15.Each of the first semiconductor chip 21, the second semiconductor chip22, and the third semiconductor chip 23 may be electrically connected tothe package substrate 11 via the plurality of first pads 25, theplurality of first conductive connections 81, and the plurality ofsubstrate pads 15.

A first tower T1 may overlap the first semiconductor chip 21 and thesecond semiconductor chip 22, from a top-down view. The first tower T1may include a first memory chip 31, a second memory chip 32, a thirdmemory chip 33, a fourth memory chip 34, a fifth memory chip 35, a sixthmemory chip 36, a seventh memory chip 37, an eighth memory chip 38, aninth memory chip 39, a tenth memory chip 40, an eleventh memory chip41, a twelfth memory chip 42, a thirteenth memory chip 43, a fourteenthmemory chip 44, a fifteenth memory chip 45, and a sixteenth memory chip46. The first to sixteenth memory chips 31 to 46 may be sequentiallystacked. The first to eighth memory chips 31 to 38 may be offset-alignedsequentially in a direction toward the first side surface S1, such thatthey are stacked sequentially in an upward staircase manner in thedirection toward the first side surface S1. The ninth to sixteenthmemory chips 39 to 46 may be offset-aligned sequentially in a directiontoward the second side surface S2, such that they are stackedsequentially in an upward staircase manner in the direction toward thesecond side surface S2.

A second tower T2 may overlap the first semiconductor chip 21 and thethird semiconductor chip 23 from a top-down view. The second tower T2may include a twenty-first memory chip 51, a twenty-second memory chip52, a twenty-third memory chip 53, a twenty-fourth memory chip 54, atwenty-fifth memory chip 55, a twenty-sixth memory chip 56, atwenty-seventh memory chip 57, a twenty-eighth memory chip 58, atwenty-ninth memory chip 59, a thirtieth memory chip 60, a thirty-firstmemory chip 61, a thirty-second memory chip 62, a thirty-third memorychip 63, a thirty-fourth memory chip 64, a thirty-fifth memory chip 65,and a thirty-sixth memory chip 66. The twenty-first to thirty-sixteenthmemory chips 51 to 66 may be sequentially stacked. The twenty-first totwenty-eighth memory chips 51 to 58 may be offset-aligned sequentiallyin a direction toward the second side surface S2, such that they arestacked sequentially in an upward staircase manner in the directiontoward the second side surface S2. The twenty-ninth to thirty-sixthmemory chips 59 to 66 may be offset-aligned sequentially in a directiontoward the first side surface S1, such that they are stackedsequentially in an upward staircase manner in the direction toward thefirst side surface S1.

The first memory chip 31 may overlap the first semiconductor chip 21 andthe second semiconductor chip 22 from a top-down view. The twenty-firstmemory chip 51 may overlap the first semiconductor chip 21 and the thirdsemiconductor chip 23 from a top-down view. In addition to beelectrically and communicatively connected to the two towers T1 and T2respectively, the second semiconductor chip 22 and third semiconductorchip 23 may serve as a physical support structure, and may each bedescribed as a support or support structure, or as including a supportportion. The plurality of first adhesive layers 72 may be attachedbetween the first memory chip 31 and the first semiconductor chip 21,between the first memory chip 31 and the second semiconductor chip 22,between the twenty-first memory chip 51 and the first semiconductor chip21, and between the twenty-first memory chip 51 and the thirdsemiconductor chip 23. The plurality of second adhesive layers 73 may beattached between the first to sixteenth memory chips 31 to 46 and thetwenty-first to thirty-sixth memory chips 51 to 66.

The plurality of second conductive connectors 83 may be disposed betweenthe first to eighth memory chips 31 to 38 and the first semiconductorchip 21, between the ninth to sixteenth memory chips 39 to 46 and thesecond semiconductor chip 22, between the twenty-first to twenty-eighthmemory chips 51 to 58 and the first semiconductor chip 21, and betweenthe twenty-first to thirty-sixth memory chips 51 to 66 and the thirdsemiconductor chip 23.

Referring to FIG. 12 , a first memory chip 31, a second memory chip 32,a third memory chip 33, and a fourth memory chip 34 may be connected toat least one corresponding first pad 25 of a plurality of first pads 25of the first semiconductor chip 21 by using at least one secondconductive connection 83 selected from among a plurality of secondconductive connections 83. A fifth memory chip 35, a sixth memory chip36, a seventh memory chip 37, and an eighth memory chip 38 may beconnected to at least one other corresponding first pad 25 of theplurality of first pads 25 of the first semiconductor chip 21 by usingat least one other second conductive connection 83 selected from amongthe plurality of second conductive connections 83.

A ninth memory chip 39, a tenth memory chip 40, an eleventh memory chip41, and a twelfth fourth memory chip 42 may be connected to at least onecorresponding first pad 25 of a plurality of first pads 25 of the secondsemiconductor chip 22 by using at least one second conductive connection83 selected from among the plurality of second conductive connections83. A thirteenth memory chip 43, a fourteenth memory chip 44, afifteenth memory chip 45, and a sixteenth memory chip 46 may beconnected to at least one other corresponding first pad 25 of theplurality of first pads 25 of the second semiconductor chip 22 by usingat least one other second conductive connection 83 selected from amongthe plurality of second conductive connections 83.

A twenty-first memory chip 51, a twenty-second memory chip 52, atwenty-third memory chip 53, and a twenty-fourth memory chip 54 may beconnected to at least one other corresponding first pad 25 of theplurality of first pads 25 of the first semiconductor chip 21 by usingat least one other second conductive connection 83 selected from amongthe plurality of second conductive connections 83. A twenty-fifth memorychip 55, a twenty-sixth memory chip 56, a twenty-seventh memory chip 57,and a twenty-eighth memory chip 58 may be connected to at least oneother corresponding first pad 25 of the plurality of first pads 25 ofthe first semiconductor chip 21 by using at least one other secondconductive connection 83 selected from among the plurality of secondconductive connections 83.

A twenty-ninth memory chip 59, a thirty memory chip 60, a thirty-firstmemory chip 61, and a thirty-second memory chip 62 may be connected toat least one corresponding first pad 25 of a plurality of first pads 25of the third semiconductor chip 23 by using at least one other secondconductive connection 83 selected from among the plurality of secondconductive connections 83. A thirty-third memory chip 63, athirty-fourth memory chip 64, a thirty-fifth memory chip 65, and athirty-sixth memory chip 66 may be connected to at least one othercorresponding first pad 25 of the plurality of first pads 25 of thethird semiconductor chip 23 by using at least one other secondconductive connection 83 selected from among the plurality of secondconductive connections 83.

Referring to FIG. 13 , a first memory chip 31, a second memory chip 32,a third memory chip 33, and a fourth memory chip 34 may beoffset-aligned sequentially in a direction toward a first side surfaceS1 of a semiconductor package according to embodiments of thedisclosure. The first memory chip 31, the second memory chip 32, thethird memory chip 33, and the fourth memory chip 34 may be connected toat least one corresponding first pad 25 of a plurality of first pads 25of a first semiconductor chip 21 by using at least one second conductiveconnection 83 selected from among a plurality of second conductiveconnections 83.

A fifth memory chip 35, a sixth memory chip 36, a seventh memory chip37, and an eighth memory chip 38 may be offset-aligned sequentially in adirection toward a second side surface S2 of the semiconductor packageaccording to embodiments of the disclosure. The fifth memory chip 35,the sixth memory chip 36, the seventh memory chip 37, and the eighthmemory chip 38 may be connected to at least one corresponding first pad25 of a plurality of first pads 25 of a second semiconductor chip 22 byusing at least one other second conductive connection 83 selected fromamong the plurality of second conductive connections 83.

A ninth memory chip 39, a tenth memory chip 40, an eleventh memory chip41, and a twelfth fourth memory chip 42 may be offset-alignedsequentially in a direction toward the first side surface S1 of thesemiconductor package according to embodiments of the disclosure. Theninth memory chip 39, the tenth memory chip 40, the eleventh memory chip41, and the twelfth fourth memory chip 42 may be connected to at leastone other corresponding first pad 25 of the plurality of first pads 25of the first semiconductor chip 21 by using at least one other secondconductive connection 83 selected from among the plurality of secondconductive connections 83.

A thirteenth memory chip 43, a fourteenth memory chip 44, a fifteenthmemory chip 45, and a sixteenth memory chip 46 may be offset-alignedsequentially in a direction toward the second side surface S2 of thesemiconductor package according to embodiments of the disclosure. Thethirteenth memory chip 43, the fourteenth memory chip 44, the fifteenthmemory chip 45, and the sixteenth memory chip 46 may be connected to atleast one other corresponding first pad 25 of the plurality of firstpads 25 of the second semiconductor chip 22 by using at least one othersecond conductive connection 83 selected from among the plurality ofsecond conductive connections 83.

A twenty-first memory chip 51, a twenty-second memory chip 52, atwenty-third memory chip 53, and a twenty-fourth memory chip 54 may beoffset-aligned sequentially in a direction toward the second sidesurface S2 of the semiconductor package according to embodiments of thedisclosure. The twenty-first memory chip 51, the twenty-second memorychip 52, the twenty-third memory chip 53, and the twenty-fourth memorychip 54 may be connected to at least one other corresponding first pad25 of the plurality of first pads 25 of the first semiconductor chip 21by using at least one other second conductive connection 83 selectedfrom among the plurality of second conductive connections 83.

A twenty-fifth memory chip 55, a twenty-sixth memory chip 56, atwenty-seventh memory chip 57, and a twenty-eighth memory chip 58 may beoffset-aligned sequentially in a direction toward the first side surfaceS1 of the semiconductor package according to embodiments of thedisclosure. The twenty-fifth memory chip 55, the twenty-sixth memorychip 56, the twenty-seventh memory chip 57, and the twenty-eighth memorychip 58 may be connected to at least one corresponding first pad 25 of aplurality of first pads 25 of a third semiconductor chip 23 by using atleast one other second conductive connection 83 selected from among theplurality of second conductive connections 83.

A twenty-ninth memory chip 59, a thirtieth memory chip 60, athirty-first memory chip 61, and a thirty-second memory chip 62 may beoffset-aligned sequentially in a direction toward the second sidesurface S2 of the semiconductor package according to embodiments of thedisclosure. The twenty-ninth memory chip 59, the thirtieth memory chip60, the thirty-first memory chip 61, and the thirty-second memory chip62 may be connected to at least one other corresponding first pad 25 ofthe plurality of first pads 25 of the first semiconductor chip 21 byusing at least one other second conductive connection 83 selected fromamong the plurality of second conductive connections 83.

A thirty-third memory chip 63, a thirty-fourth memory chip 64, athirty-fifth memory chip 65, and a thirty-sixth memory chip 66 may beoffset-aligned sequentially in a direction toward the first side surfaceS1 of the semiconductor package according to embodiments of thedisclosure. The thirty-third memory chip 63, the thirty-fourth memorychip 64, the thirty-fifth memory chip 65, and the thirty-sixth memorychip 66 may be connected to at least one other corresponding first pad25 of the plurality of first pads 25 of the third semiconductor chip 23by using at least one other second conductive connection 83 selectedfrom among the plurality of second conductive connections 83.

Referring to FIG. 14 , first to eighth memory chips 31 to 38 may bezigzag-stacked on a first memory chip 21 and a second memory chip 22.Twenty-first to twenty-eighth memory chips 51 to 58 may bezigzag-stacked on the first memory chip 21 and a third memory chip 23.For example, the second memory chip 32 may be offset-aligned on thefirst memory chip 31 in a direction toward a first side surface S1 of asemiconductor package according to embodiments of the disclosure. Thethird memory chip 33 may be offset-aligned on the second memory chip 32in a direction toward a second side surface S2 of the semiconductorpackage according to embodiments of the disclosure. The twenty-secondmemory chip 52 may be offset-aligned on the twenty-first memory chip 51in a direction toward the second side surface S2 of the semiconductorpackage according to embodiments of the disclosure. The twenty-thirdmemory chip 53 may be offset-aligned on the twenty-second memory chip 52in a direction toward the first side surface S1 of the semiconductorpackage according to embodiments of the disclosure.

The first memory chip 31, the third memory chip 33, the fifth memorychip 35, and the seventh memory chip 37 may be connected to at least onecorresponding first pad 25 of a plurality of first pads 25 of the firstsemiconductor chip 21 by using a plurality of second conductiveconnections 83. The second memory chip 32, the fourth memory chip 34,the sixth memory chip 36, and the eighth memory chip 38 may be connectedto at least one corresponding first pad 25 of a plurality of first pads25 of the second semiconductor chip 22 by using the plurality of secondconductive connections 83.

The twenty-first memory chip 51, the twenty-third memory chip 53, thetwenty-fifth memory chip 55, and the twenty-seventh memory chip 57 maybe connected to at least one corresponding first pad 25 of a pluralityof first pads 25 of the first semiconductor chip 21 by using a pluralityof second conductive connections 83. The twenty-second memory chip 52,the twenty-fourth memory chip 54, the twenty-sixth memory chip 56, andthe twenty-eighth memory chip 58 may be connected to at least onecorresponding first pad 25 of a plurality of first pads 25 of the thirdsemiconductor chip 23 by using the plurality of second conductiveconnections 83.

Referring to FIG. 15 , first to eighth memory chips 31 to 38 may bestacked on a first memory chip 21 and a second memory chip 22 and mayoverhang each of the first memory chip 21 and the second memory chip 22.Twenty-first to twenty-eighth memory chips 51 to 58 may be stacked onthe first memory chip 21 and a third memory chip 23 and may overhangeach of the first memory chip 21 and the third memory chip 23. Forexample, the first to eighth memory chips 31 to 38 may be verticallyaligned to have coplanar side surfaces. The twenty-first totwenty-eighth memory chips 51 to 58 may be vertically aligned to havecoplanar side surfaces.

A plurality of second adhesive layers 73 may be attached between thefirst to eighth memory chips 31 to 38 and between the twenty-first totwenty-eighth memory chips 51 to 58. Each of the plurality of secondadhesive layers 73 may include substantially the same thickness andsubstantially the same material as those of each of a plurality of firstadhesive layers 72. The plurality of first adhesive layers 72 and theplurality of second adhesive layers 73 may include a DAF or an FOW.

Each of the first to eighth memory chips 31 to 38 may be connected to atleast one corresponding first pad 25 of a plurality of first pads 25 ofthe first semiconductor chip 21 by using a plurality of secondconductive connections 83. Each of the first to eighth memory chips 31to 38 may be connected to at least one corresponding first pad 25 of aplurality of first pads 25 of the second semiconductor chip 22 by usingthe plurality of second conductive connections 83.

Each of the twenty-first to twenty-eighth memory chips 51 to 58 may beconnected to at least one other corresponding first pad 25 of theplurality of first pads 25 of the first semiconductor chip 21 by usingthe plurality of second conductive connections 83. Each of thetwenty-first to twenty-eighth memory chips 51 to 58 may be connected toat least one corresponding first pad 25 of a plurality of first pads 25of the third semiconductor chip 23 by using the plurality of secondconductive connections 83. The plurality of second conductiveconnections 83 may extend to inner portions of the plurality of secondadhesive layers 73. The plurality of second conductive connections 83may partially pass through the plurality of second adhesive layers 73.

According to the embodiments of the disclosure, a plurality of towerswhich include a plurality of main memory chips and are apart from oneanother may be provided. A lowermost main memory chip of each of theplurality of towers may overlap a semiconductor chip. A semiconductorpackage, which is easy to increase the degree of integration and anoperating speed, may be implemented.

Hereinabove, the embodiments of the disclosure have been described withreference to the accompanying drawings, but it may be understood thatthose skilled in the art may implement the embodiments in anotherdetailed form without changing the inventive concept or the essentialfeature. It should be understood that the embodiments described aboveare merely examples in all aspects and are not limited.

What is claimed is:
 1. A semiconductor package comprising: a packagesubstrate; a semiconductor chip on the package substrate; a plurality offirst conductive connections connecting the semiconductor chip to thepackage substrate; a first spacer and a second spacer on the packagesubstrate, each of the first spacer and the second spacer horizontallyspaced apart from the semiconductor chip; a first tower and a secondtower each including a plurality of memory chips, a first memory chipdisposed at a lowermost end of the first tower and verticallyoverlapping the semiconductor chip and the first spacer from a top-downview, and a second memory chip disposed at a lowermost end of the secondtower and vertically overlapping the semiconductor chip and the secondspacer from a top-down view; and a plurality of first adhesive layersincluding an adhesive layer attached between the first memory chip andthe semiconductor chip, an adhesive layer attached between the firstmemory chip and the first spacer, an adhesive layer attached between thesecond memory chip and the semiconductor chip, and an adhesive layerattached between the second memory chip and the second spacer.
 2. Thesemiconductor package of claim 1, wherein a horizontal width of thepackage substrate is a first width, a horizontal width of an overlapregion between the first memory chip and the semiconductor chip is asecond width, and the second width is less than half of the first width.3. The semiconductor package of claim 2, wherein the second width isabout 0.2 mm or more.
 4. The semiconductor package of claim 2, whereinthe package substrate comprises a first side surface and a second sidesurface opposite to the first side surface, a minimum horizontaldistance between any of the plurality of memory chips and an extensionline which passes through the first side surface and is perpendicular toa top surface of the package substrate is a third width, and the thirdwidth is greater than 0 mm and less than or equal to the second width.5. The semiconductor package of claim 4, wherein the second width isgreater than or equal to the third width.
 6. The semiconductor packageof claim 1, wherein the semiconductor chip comprises a plurality ofpads, and each of the first memory chip and the second memory chipoverlaps an upper portion of at least one of the plurality of pads, froma top-down view.
 7. The semiconductor package of claim 1, wherein atleast some of the plurality of first conductive connections extend to bewithin an inner boundary formed by the plurality of first adhesivelayers.
 8. The semiconductor package of claim 1, wherein the pluralityof first adhesive layers comprise a direct adhesive film (DAF) or a filmover wire (FOW).
 9. The semiconductor package of claim 1, wherein thepackage substrate comprises a first side surface and a second sidesurface opposite to the first side surface, the plurality of memorychips of the first tower are stacked sequentially and in an upwardstaircase manner in a direction toward the first side surface, and theplurality of memory chips of the second tower are stacked sequentiallyand in an upward staircase manner in a direction toward the second sidesurface.
 10. The semiconductor package of claim 1, wherein a sidesurface of the first memory chip and a side surface of the first spacerare coplanar with each other, and a side surface of the second memorychip and a side surface of the second spacer are coplanar with eachother.
 11. The semiconductor package of claim 1, wherein thesemiconductor chip and top surfaces of the first and second spacers arecoplanar with each other.
 12. The semiconductor package of claim 1,wherein the semiconductor chip comprises a buffer chip, an interposerchip, a controller chip, a logic chip, or a combination thereof.
 13. Thesemiconductor package of claim 1, further comprising a plurality ofsecond conductive connections connecting the plurality of memory chipsto the semiconductor chip.
 14. The semiconductor package of claim 1,further comprising a plurality of second adhesive layers disposedbetween pairs of the plurality of memory chips, wherein a thickness ofeach of the plurality of first adhesive layers is thicker than athickness of each of the plurality of second adhesive layers.
 15. Asemiconductor package comprising: a package substrate; a semiconductorchip on the package substrate; a plurality of conductive connectionsconnecting the semiconductor chip to the package substrate; a pluralityof towers apart from one another, each including a plurality of memorychips, a lowermost memory chip of each of the plurality of towersoverlapping the semiconductor chip from a top-down view; and a pluralityof adhesive layers attached between the lowermost memory chip of each ofthe plurality of towers and the semiconductor chip.
 16. Thesemiconductor package of claim 15, wherein the plurality of conductiveconnections extend to be within an inner boundary formed by theplurality of adhesive layers.
 17. The semiconductor package of claim 15,wherein: the plurality of towers includes at least a first tower,wherein a bottom-most surface of the first tower overlaps thesemiconductor chip and extends beyond an outermost edge of a top surfaceof the semiconductor chip.
 18. The semiconductor package of claim 15,wherein: the package substrate comprises a first side surface and asecond side surface opposite to the first side surface, a plurality ofmemory chips of a first tower of the plurality of towers are stackedsequentially and in an upward staircase manner in a direction toward thefirst side surface, and a plurality of memory chips of a second tower ofthe plurality of towers are stacked sequentially and in an upwardstaircase manner in a direction toward the second side surface.
 19. Asemiconductor package comprising: a package substrate; a firstsemiconductor chip, a second semiconductor chip, and a thirdsemiconductor chip on the package substrate, horizontally spaced apartfrom each other; a plurality of first conductive connections connectingthe first to third semiconductor chips to the package substrate; a firsttower and a second tower each including a plurality of memory chips, afirst memory chip disposed at a lowermost end of the first toweroverlapping the first semiconductor chip and the second semiconductorchip from a top-down view, and a second memory chip disposed at alowermost end of the second tower overlapping the first semiconductorchip and the third semiconductor chip from a top-down view; and aplurality of first adhesive layers attached respectively between thefirst memory chip and the first semiconductor chip, between the firstmemory chip and the second semiconductor chip, between the second memorychip and the first semiconductor chip, and between the second memorychip and the third semiconductor chip.
 20. The semiconductor package ofclaim 19, wherein the package substrate comprises a first side surfaceand a second side surface opposite to the first side surface, theplurality of memory chips of the first tower are stacked sequentially,some of the plurality of memory chips of the first tower are stackedsequentially in an upward staircase manner in a direction toward thefirst side surface, and some other memory chips of the plurality ofmemory chips of the first tower are stacked sequentially in an upwardstaircase manner in a direction toward the second side surface, and theplurality of memory chips of the second tower are stacked sequentially,some of the plurality of memory chips of the second tower are stackedsequentially in an upward staircase manner in a direction toward thesecond side surface, and some other memory chips of the plurality ofmemory chips of the second tower are stacked sequentially in an upwardstaircase manner in a direction toward the first side surface.